BCW65 series bcw66 series surface mount npn silicon transistor description: the central semiconductor BCW65 and bcw66 series types are npn silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. marking code: see marking code table on following page maximum ratings: (t a =25c) symbol BCW65 bcw66 units collector-base voltage v cbo 60 75 v collector-emitter voltage v ceo 32 45 v emitter-base voltage v ebo 5.0 v continuous collector current i c 800 ma peak collector current i cm 1.0 a continuous base current i b 100 ma peak base current i bm 200 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =rated v ceo 20 na i cbo v cb = rated v ceo , t a =150c 20 a i ebo v eb =4.0v 20 na bv cbo i c =10a (BCW65) 60 v bv cbo i c =10a (bcw66) 75 v bv ceo i c =10ma (BCW65) 32 v bv ceo i c =10ma (bcw66) 45 v bv ebo i e =10a 5.0 v v ce(sat) i c =100ma, i b =10ma 0.3 v v ce(sat) i c =500ma, i b =50ma 0.7 v v be(sat) i c =100ma, i b =10ma 1.25 v v be(sat) i c =500ma, i b =50ma 2.0 v f t v ce =5.0v, i c =50ma, f=20mhz 170 mhz c c v cb =10v, i e =0, f=1.0mhz 6.0 pf c e v eb =0.5v, i c =0, f=1.0mhz 60 pf BCW65a BCW65b BCW65c bcw66f bcw66g bcw66h min max min max min max h fe v ce =10v, i c =100a 35 50 80 h fe v ce =1.0v, i c =10ma 75 110 180 h fe v ce =1.0v, i c =100ma 100 250 160 400 250 630 h fe v ce =2.0v, i c =500ma 35 60 100 sot-23 case r2 (20-november 2009) www.centralsemi.com
BCW65 series bcw66 series surface mount npn silicon transistor sot-23 case - mechanical outline lead code: 1) base 2) emitter 3) collector device marking code BCW65a ea BCW65b eb BCW65c ec bcw66f ef bcw66g eg bcw66h eh www.centralsemi.com r2 (20-november 2009)
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